Fundamentals and Present Aspects of Ion Beam Technology. V. Application of Ion Beam. 3. Application of Industries. 3.4 Ion beam etching.

Ion beam induced dry etching and possibility of highly charged ion beam

Dry etching techniques employing ion beam induced surface reaction and the possibility of highly charged ion beam in dry etching are described, and the preliminary work on dry etching of GaAs using highly charged ion (HCI) is also presented. In usual dry etching, total etch rate is a summation of the physical sputtering rate, the chemical etching rate, and the ion-induced chemical etching rate....

Ion Beam Radiotherapy

............................................................................................................... 3 43 PREFACE .................................................................................................................... 4 44 MAIN POINTS ............................................................................................................ 6 45 GLOSSARY ..................

Ion beam analysis.

Focused Ion Beam Lithography

Beam-ion instability

1098-4402= In this paper the results of the experimental measurements at Berlin electron storage ring for synchrotron radiation (BESSY-II) are presented. Grow/damp measurements of the transverse coupledbunch instabilities were performed using a multibunch feedback system and a synchronized time-domain bunch motion recorder. The results of these experiments are described and explained by the bea...